Design for Manufacturability and Yield for Nano-Scale CMOS by Charles Chiang, Jamil Kawa

By Charles Chiang, Jamil Kawa

This e-book walks the reader via the entire facets of manufacturability and yield in a nano-CMOS strategy. It covers all CAD/CAE elements of a SOC layout stream and addresses a brand new subject (DFM/DFY) severe at ninety nm and past. This publication is a needs to learn booklet the intense training IC fashion designer and a very good primer for any graduate pupil motive on having a profession in IC layout or in EDA software improvement.

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Extra info for Design for Manufacturability and Yield for Nano-Scale CMOS (Integrated Circuits and Systems)

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10 shows the typical life cycle of a new product. The typical time needed for a product from concept to first silicon is product dependent but is estimated on an average to be two years with a total cost anywhere from $25 Million to $40 Million. A typical re-spin is 6 months. Now, the cost of a re-spin is interesting to figure out. From a materials and engineering time perspective it is no more than perhaps $2 millions. 6. 10. Revenue as a Function of Design Cycle half the total revenue of the product.

4 demonstrates the need for OPC in sub-wavelength lithography. Examples of layout procedures are optical proximity correction (OPC), which could be rule or model based, and which involves the addition of sub-resolution assist features (SRAF). An example of a combination of a layout-mask procedure would be phase-shift mask (PSM). Examples of optical procedures of RET includes off-axis illumination, pupil filtering, and multiple exposures. Since we will be covering these in detail in Chapter 3 we will limit our exposure of this topic to the basics.

4 shows the wavelength of the light source used versus the technology node processed using that source light. We obviously skipped many technology nodes but the point we wanted to stress here is that past the 130nm technology node the critical dimension (CD) of the featured technology is significantly less than half of the wavelength (λ) of the light source used in the lithography. It is also significant to mention that efforts to develop a 157 nm illumination source has been all but abandoned in 2005 due to vast technical difficulties associated with the mask and photoresist technologies needed to go along with that light source.

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